patterned是什么意思terned在线翻译读音

Fabricationof5nmlinewidthand14nmpitchfeatures

bynanoimprintlithography

,a),b)HaixiongGe,b)WeiWu,b)MingtaoLi,b)ZhaoningYu,b)

man,,)

DepartmentofElectricalEngineering,PrincetonUniversity,NewJersey08544

(Received10March2004;accepted7May2004;publishedonline17June2004)

Wereportadvancesinnanoimprintlithography,itsapplicationinnanogapmetalcontacts,and

demonstrated5nmlinewidthand14nmlinepitchinresistusing

naicatedgold

contacts(fortheapplicationofsinglemacromoleculedevices)with5nmseparationbynanoimprint

y,theuniformityandmanufacturabilityofnanoimprintovera

eredemonstrated.2004AmericanInstituteofPhysics.[DOI:10.1063/1.1766071]

Thefi-

cationsofnanotechnologyincludesubwavelengthopticalel-

ements,biochemicalanalysisdevices,photoniccrystals,

high-densitysingle-domainmagneticstorage,andsingle-

moleculedevices,,keytothecommercial

successofthesenanotechnologyapplicationsarelowcost

-of-the-

artmanufacturingphotolithographypatterningtoolsareboth

tooexpensiveandincapableofproducingthenecessarypitch

,presently,re-

searchersh黄庭坚书法作品 avebeenlargelyconstrainedtousinglow-

throughputlithographytools,suchaselectron-beamlithog-

raphy(EBL),atomicforcemicroscopy(AFM),andion-beam

h-throughputandlow-costlithography,

various“nanoprinting”technologieshavebeendeveloped.1–3

Here,wereportourinvestigationoftheresolutionlimitof

nanoimprintlithography,wherewedemonstratedananoim-

printrecordof5nmlinewidthfeaturesand14nmpitchover

alargearea,itsapplicationsinnanogapmetalcontacts,anda

studyoffabricationyields.

Inphotocurablenanoimprintlithography(P-NIL)

(showninFig.1),amoldispressedintoalowviscosity

photocurableresistliquidtophysically朱自清散文集25篇 deformtheresist

resistiscuredwithexposuretoUVlight,crosslinkingthe

variouscomponentsintheresistliquid,producingauniform,

disthenseparated

y,ananisotropicreactiveionetch

(RIE)removestheresidualresistinthecompressedarea,

exposingthesubstratesurface.

InordertoexploretheperformanceofP-NIL,avariety

ofmoldswerefabricatedtotestspecificattributes,including

minimumpitch(maximumdensity),minimumfeaturesize,

usly,10nmdots

and40nmpitchhavebeendemonstratedbyNIL1withthe

resolutionlimitedbyourabilitytofabricatethemold,as

proximityeffectsinherentwithEBLmakesub-35nmpitch

patterningverydiffiuceamoldwithapitch

resolutionsurpassingEBLcapabilities,wefabricatedaNIL

moldbyselectivelywetetchingAl

0.7

Ga

0.3

Asfromacleaved

edgeofaGaAs/Al

0.7

Ga

0.3

Assuperlattice[grownby

molecular-beamepitaxy(MBE)]withadilutesolutionof

hydrofluoricacid(HF).4,5Thismoldfabricationprocessof-

fersmanyadvantages,specificallyverydensesub-50nm

pitchtopologiescanbemanufacturedoveralargeareawith

verticalandsmoothsidewalls,lowdefectandlinewidth

variation,andthepitchanddutycyclearecontrollableto

tion,theGaAsmoldhasmultiple

MBEsuperlatticegrowthsofv大团结 aryingpitch,thusallowingus

todeterminetheminimumpitchresolutionofP-NIL.

TheGaAsmoldwaspressedintoaP-NILresistona

transparentquartzsubstrate,andtheresistwasexposedto

UVlightthroughthequartz,curingtheresist,allowingthe

moldtobereleased,leavingtheresistpatternedonthesub-

mprint,thecuredpolymerwassputter-coated

with4nmofIrtoaidinscanningelectronmicroscopy

SEMimaging,however,thermaldamagetothepatterned

structuresbytheSEMelectronbeamlimitedourabilityto

2(a)showsaSEMimage

oftheP-NILpolymerafterimprintwith14nmpitchand

7nmlinewidthpattern,thedensestpatterningwewereca-

pableofconfirmingwithSEManalysisofthepolymer,but

a)Electronicmail:**********************

b)MemberofNanoStructureLaboratory.

ticofthenanoimprintlithographyprocess:(a)Alowvis-

cosityresistfilmispressedwithamoldtocreateathicknesscontrastinthe

ististhenexposedtoUVlight,curingittoproducearigidand

durabletightlybondedpolymernetworkthatconformsthemoldfeatures.

(b)Themoldisseparatedfromthepolymerfilm.(c)Patterntransferusing

anisotropicetchingtoremoveresidueresistinthecompressedtroughs.

APPLIEDPHYSICSLETTERSVOLUME84,NUMBER2628JUNE2004

0003-6951/2004/84(26)/5299/3/$20.002004AmericanInstituteofPhysics5299

ributionsubjecttoAIPlicenseorcopyright,see/apl/

whichmaynotrepresenttheultimateresolutionlimitof

P-NIL.

Figure2(b)showsthetroughsof30and45nmpitch

GaAsmoldsafterimprint,andFig.2(c)thecuredimprinted

P-NILpolymerwiththereproduced30and45nmpitchlines.

Thefidelityofthepatterntransferisexcellentasthelines

extendforseveralhundredsofmicronswithoutdefectsor

variationinwidth,mirroringthetroughsoftheGaAsmold.

P-NILresistadhesiontotheGaAsmoldafterseparationwas

reducedbytreatingthemoldwithanalkanethiolself-

assembledmonolayer(SAM)toreduceitssurfaceenergy.6,7

AsFig.2(b)shows,themoldtroughsareclearofpolyme形容云的诗句 r

residueafterimprint.

Furtherinvestigationoftheminimumsizecapabilityof

P-NILwasperformedwithasiliconwafermoldfabricated

,EBLisadvantageousassparse

smallfeaturescanbereliablypatternedonasiliconsubstrate.

Thesepatternsarethentransferredintothesiliconsubstrate,

asdescribedinRef.1withadryRIEetchproducingamold.

Thesiliconmoldconsistsofnanogapcontactsforpoten-

tialuseastrapsforsingle-moleculeself-assembly,asshown

inFig.3(a).Figure3(b)showsanSEMimageoftheim-

llestfeaturesizeon

themoldof5nmwasreproducedintheresistwithouttear-

wasthesmall-

estfeaturesizeonthemoldobtainablebyEBLpatterning,

theultimateresolutionofP-NILisstillunknown.

Keytothislithographytechnologyisthephotocurable

Ref.3,our

resistwasspin-coated,thusensuringauniformthickness

ontroloverthe

resistthicknessisvitaltomaintainingcontroloverpatterned

cknessofthefilmdependsonthe

molddepth,istconsistsof

multiplecomponentswhoseexactcompositionisproprietary

marycom-

ponentisareactivesiliconcontainingoligomerwhosefunc-

tionistoprovidehighetchresistivitytoanoxygenplasma

RIEetch,andreducesurfaceenergytoaidinmoldsepara-

initiatorcomponentinitiatespolymerization

uponexposuretoUVbyallowingacrosslinkingagentto

formbondswithneighboringreactiveoligomers,thuspro-

latemono-

merprovideshighsolubilityforthevariouscomponents,a

lowviscosityofapproximately100cpbeforecuring,and

preventsshrinkageduringcuring.

TheP-NILresistsolutionisspin-coatedoveratransfer

layerpolymerfilmofpoly(methylmethacrylate)(PMMA)on

nsferlayermaterialcanbevaried

tosuitthespecifi,PMMAwas

chosenforitshighsolubilityinacetoneforalift-offprocess.

TheNILmoldisthenpressedintothelowviscosityP-NIL

resistatroompressure15psiallowingthesolutiontocon-

rizationofthe

P-NILresististhenperformedbyexposingthefilmtoa

broadbandxenonUVlampsource,ensuringadoseof

greaterthan40mJ/xposure,themoldisre-

leased,radhe-

siontothesiliconmoldispreventedbyreducingsurface

energywithafluoroalkyltrichlorosilaneSAM.

Afterseparation,theresidualP-NILpolymerintheim-

printtroughisanisotropicallyetchedwithaRIEplasmaof

CHF

3

andO

2

Ais

FIG.2.(a)Demonstrationofultrahighdensityphotocurablenanoimprint

lithographywithaSEMimageofcuredP-NILpolymerpatternedbyamold

witha14nmpitchgratingwith7nmlinewidth.(b)SEMofaP-NILmold

showing30and45nmpitchtroughs.(c)SEMofcuredP-NILpolymerwith

protruding30and45nmpitchlinescontinuousoverseveralhundredmi-

ineswerefabricatedfromthemoldshownin(b),

clearlyshowingthatnoresiduepolymerremainsinthemoldaftersepara-

tion,andthepatterntransferfidelityishigh.

trationof5nmresolutionphotocurablenanoimprintlithog-

raphywithapplicationforsingle-moleculecontacts.(a)SEMimagesofa

siliconoxidemold.(b)SEMimagesoftheimprintedP-NILresistafterUV

aturesassmallas5nmwerereliably

reproducedintheresist.(c)SEMimagesofAucontactsafterevaporationof

tgapsasnarrowas5nmcanbe

fabricated.

.,Vol.84,No.26,28June2004Austinetal.

ributionsubjecttoAIPlicenseorcopyright,see/apl/

thenetcheddowntothesubstratesurfacewithanO

2

plasma

hselectiv-

ityoftheO

2

plasmatothePMMAovertheP-NILpolymer

isgreaterthan10:strateisnowpatternedwitha

bilayerpolymerfit-

ternedbilayercanbeusedforlift-offapplications,orasan

ethepolymeretch-

ingisatwo-stepprocess,theaspectratioofthepatterned

polymerbilayerfilmcanbegreaterthanthatoftheoriginal

mold.

Next,patterntransferwasdemonstratedwithalift-off

processbyevaporating2nmofCrand12nmofAudirectly

onthesample,andthenremovingthebilayerfilmbydissolv-

rtz

substratewasthenpatternedwithgoldcontactsseparatedby

aslittleas5nm,asshowninFig.3(c).Theyieldsofthegold

contactsexceeded90%provideddustdidnotcontaminate

theprocess.

Fabricationofsub-10nmcontactsofsufficientresolu-

tiontotrapcomplexmacromolecules8willsubstantiallyad-

vancetheemergingfieldofsingle-moleculedevicesbyal-

lowingtherapidproductionofmultiplecontactsinparallel.

Typically,contactsaremadeoneattimewithserialprocess-

ingsuchasAFMprobing,9scanningtunnelingmicroscope

probing,10electromigration,11,12electrochemical桃花源记拼音版原文 growth,13

EBL,14,15trappingcolloidalgoldparticleswithdielectric

force,16orshadowevaporating.17

Finally,westudiedalarge-areaP-NILimprint,anddem-

-

ure4(a)showstheP-NILpatterntransferprocessovera

nwafersubstrateafterthetwo-steppolymerRIE.

Hence,theentirewaferwaspatternedwitha200nmgrating

gesatthecenter,andaroundthe

3-in.-diametercircumferenceshowpatternedpolymeruni-

formitycanbeobtainedovertheentirewaferwithnonotice-

ablevariationincriticaldimension,thickness,sidewall

roughness,4(b)showsahigherreso-

lutionimageofthepolymerbilayerswiththecuredP-NIL

resistontop,ewallsare

almostperfectlystraightduetothehighresistivelyofthe

P-NILresisttotheanisotropicoxygenplasmaetch.

Insummary,wehavedemonstratedthatP-NILisca-

pableof14nmpitchlines,5nmcriticaldimensionfeatures,

nasingle

oimprintprocessisperformedatroomtempera-

tureandrequireslessthan15psipressure,thusallowingfor

awiderangeoftemperature-andpressure-sensitiveapplica-

ayerpolymerfilm,withtheuniquespin-coated

applica蜡炬成灰泪始干比喻什么 tionoftheP-NILresist,ensurestightprocesscontrol

overtheentiresubstrate,aspect-ratioenhancement,no“tear-

off,”

workwillinvolvefurtherdevelopmentoftheP-NILpoly-

mer,deepsub-micronalignmentformultilayerNIL,and

greaterautomationoftheimprintprocess.

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wafer:(a)Afterimprintofa200nmperiodgrating,andanisotropicetching,

patternedpolymerbilayershowsnoindicationofvariationincriticaldimen-

sioncontrol,thickness,sidewallroughness,oraspectratio.(b)Ahighmag-

nificationSEMimageofthepolymerbilayer,showingthetopP-NILcured

resist,andunderneath,thetransferpolymerlayer.

.,Vol.84,No.26,28June2004Austinetal.5301

ributionsubjecttoAIPlicenseorcopyright,see/apl/