ices是什麼意思s在線翻譯讀音例句

C-15

IRGBC40S

StandardSpeedIGBTINS关羽演员死亡原因 ULATEDGATEBIPOLARTRANSISTOR

R

JC

Junction-to-Case——0.77

R

CS

Case-to-Sink,flat,greasedsurface—0.50—C/W

R

JA

Junction-to-Ambient,typicalsocketmount——80

W唐诗江南春杜牧 tWeight—2.0(0.07)—g(oz)

Features

•Switching-lossratingincludesall\"tail\"losses

•Optimizedforlinefrequencyoperation(to400Hz)

ncycurve

V

CES

=600V

V

CE(sat)

≤1.8V

@V

GE

=15V,I

C

=31A

E

C

G

n-channel

Description

InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhave

higherusablecurrentdensitiesthancomparablebipolartransistors,whileat

thesametimehavingsimplergate-driverequirementsofthefamiliarpower

ovidesubstantialbenefitstoahostofhigh-voltage,high-

currentapplications.

AbsoluteMaximumRatings

V

CES

Collector-to-EmitterVoltage600V

I

C

@T

C

=谷歌官方app下载 25CContinuousCollectorCurrent50

I

C

@T

C

=100CContinuousCollectorCurrent31A

I

CM

PulsedCollectorCurrent240

I

LM

C相看两不厌什么意思 lampedInductiveLoadCurrent100

V

GE

Gate-to-EmitterVoltage20V

E

ARV

ReverseVoltageAvalancheEnergy15mJ

P

D

@T

C

=25CMaximumPowerDissipation160W

P

D

@T

C

=100CMaximumPowerDissipation65

T

J

OperatingJunctionand-55to+150

T

STG

StorageTemperatureRangeC

SolderingTemper碛中作古诗 ature,for10sec.300(0.063in.(1.6mm)fromcase)

Mountingtorque,6-32orM3screw.10lbf•in(1.1N•m)

ThermalResistance

PD-9.690A

TO-220AB

Revision0

元器件交易网

C-16

IRGBC40S

元器件交易网

C-17

ncy

(Forsquarewave,I=I奔流到海不复回赏析

RMS

offundamental;fortriangularwave,I=I

PK

)

Fig.2-TypicalOutputCharacteristics

Fig.3-TypicalTransferCharacteristics

元器件交易网

C-18

Fig.5-Collector-to-EmitterVoltagevs.

CaseTemperature

Fig.4-MaximumCollectorCurrentvs.

CaseTemperature

IRGBC40S

元器件交易网

C-19

IRGBC40S

元器件交易网

C-20

元器件交易网